High thermoelectric efficiency in lanthanum doped Yb14MnSb11
نویسندگان
چکیده
منابع مشابه
Thermoelectric Properties of Lanthanum-Doped Europium Titanate
The thermoelectric properties of lanthanum-doped polycrystalline perovskite-type europium titanate were measured from room temperature to 900K and compared to those of MTiO3 (M 1⁄4 Ca, Sr, Ba). The differences in the titanates were calculated in terms of the differences of A-site ion and Ti–O distance that determined the covalent bonding strength. The A-site ion appeared to have little influenc...
متن کاملSynthesis, structure, magnetism, and high temperature thermoelectric properties of Ge doped Yb14MnSb11.
The Zintl phase Yb(14)MnSb(11) was successfully doped with Ge utilizing a tin flux technique. The stoichiometry was determined by microprobe analysis to be Yb(13.99(14))Mn(1.05(5))Sb(10.89(16))Ge(0.06(3)). This was the maximum amount of Ge that could be incorporated into the structure via flux synthesis regardless of the amount included in the reaction. Single crystal X-ray diffraction could no...
متن کاملMechanochemical synthesis and high temperature thermoelectric properties of calcium-doped lanthanum telluride La3xCaxTe4
The thermoelectric properties from 300–1275 K of calcium-doped La3 xTe4 are reported. La3 xTe4 is a high temperature n-type thermoelectric material with a previously reported zTmax B 1.1 at 1273 K and x = 0.23. Computational modeling suggests the La atoms define the density of states of the conduction band for La3 xTe4. Doping with Ca 2+ on the La site is explored as a means of modifying the de...
متن کاملHigh temperature thermoelectric efficiency in Ba8Ga16Ge30
The high thermoelectric figure of merit zT of Ba8Ga16Ge30 makes it one of the best n-type materials for thermoelectric power generation. Here, we describe the synthesis and characterization of a Czochralski pulled single crystal of Ba8Ga16Ge30 and polycrystalline disks. Measurements of the electrical conductivity, Hall effect, specific heat, coefficient of thermal expansion, thermal conductivit...
متن کاملResonant level-induced high thermoelectric response in indium-doped GeTe
Resonant levels are promising for high-performance single-phase thermoelectric materials. Recently, phase-change materials have attracted much attention for energy conversion applications. As the energetic position of resonant levels could be temperature dependent, searching for dopants in phase-change materials, which can introduce resonant levels in both low and high temperature phases, remai...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2008
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2970089